Fabrication of nanocrystalline Si:H nanodot arrays with controllable porous alumina membranes

被引：7

作者：

Ding, G. Q. ^{[1
]}

Zheng, M. J. ^{[1
]}

Xu, W. L. ^{[1
]}

Shen, W. Z. ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Lab Condensed Matter Spect & Optoelect Phys, Dept Phys, Shanghai 200030, Peoples R China

来源：

THIN SOLID FILMS | 2006年 / 508卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

silicon; nanostructrures; anodic oxidation;

D O I：

10.1016/j.tsf.2005.07.318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on the successful growth of hydrogenated nanocrystalline silicon (nc-Si:H) thin films with Si natural quantum dots (NQDs) of 3-6 nm in mean size, we have fabricated nc-Si:H artificial quantum nanodot (AQD) arrays on Si substrates by a low-cost and industrialized plasma-enhanced chemical vapor deposition technique through free-standing ultrathin porous alumina membranes (PAMs). In order to well control the morphology of the nc-Si:H AQD arrays, we have presented detailed information on the fabrication of PAMs with controllable thickness (1001000 nm) and pore diameter (50-90 nm). In every nc-Si:H AQD, there are similar to 10(2) Si NQDs, and the sheet densities of nc-Si:H AQDs and Si NQDs are over 1 x 10(10) cm(-2) and 3 x 10(11) cm(-2), respectively. The combination of the AQD fabrication through PAM masks with the Si NQDs in nc-Si:H provides us an easy and practical way for the realization of nc-Si:H based nanodevice arrays with true quantum size effects. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：182 / 185

页数：4

共 9 条

[1] Temperature-dependent optical properties of B-doped nc-Si:H thin films in the interband region [J].