Post-growth surface smoothing of thin films of diindenoperylene

被引：22

作者：

Hinderhofer, A. ^{[1
,2
]}

Hosokai, T. ^{[3
]}

Yonezawa, K. ^{[2
]}

Gerlach, A. ^{[1
]}

Kato, K. ^{[2
]}

Broch, K. ^{[1
]}

Frank, C. ^{[1
]}

Novak, J. ^{[1
,4
]}

Kera, S. ^{[2
]}

Ueno, N. ^{[2
]}

Schreiber, F. ^{[1
]}

机构：

[1] Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

[2] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan

[3] Iwate Univ, Dept Mat & Sci, Morioka, Iwate 0208551, Japan

[4] ESRF, F-38043 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

ENERGY-LEVEL ALIGNMENT; OPEN-CIRCUIT VOLTAGE; GROWTH; INTERFACES; SIO2; ELECTRONICS; PENTACENE; ACCEPTOR; DEVICES; CELLS;

D O I：

10.1063/1.4737168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We applied in situ x-ray reflectivity and ultraviolet photoelectron spectroscopy to study the impact of annealing on low temperature (200 K) deposited organic thin films of diindenoperylene (DIP) on SiO2 and indium tin oxide (ITO). At 200 K, DIP is crystalline on SiO2 and amorphous on ITO. Upon heating to room temperature, the roughness of DIP is reduced on both substrates, from 1.5 nm to 0.75 nm (SiO2) and from 0.90 nm to 0.45 nm (ITO). The smoothing is accompanied by crystallization of the surface molecules, whereas the bulk structure of the films does not strongly reorganize. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737168]

引用

页数：4

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