Generation of single color centers by focused nitrogen implantation

被引：203

作者：

Meijer, J ^{[1
]}

Burchard, B

Domhan, M

Wittmann, C

Gaebel, T

Popa, I

Jelezko, F

Wrachtrup, J

机构：

[1] Ruhr Univ Bochum, Cent Lab Ion Beam & Radionuclides, Bochum, Germany

[2] Univ Stuttgart, Inst Phys 3, D-7000 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 26期

关键词：

D O I：

10.1063/1.2103389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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