EXAFS studies of Mg doped InN grown on Al2O3

被引：16

作者：

Blant, AV

Cheng, TS

Jeffs, NJ

Flannery, LB

Harrison, I

Mosselmans, JFW

Smith, AD

Foxon, CT

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

[3] CLRC, Daresbury Labs, Warrington WA4 4AD, Cheshire, England

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

indium nitride; molecular beam epitaxy; EXAFS; Mg doping; semiconductors; Group III-nitrides;

D O I：

10.1016/S0921-5107(98)00394-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have been studying the structural properties of Group III-nitrides by EXAFS. Previously we have investigated bulk Group III-nitrides and its alloys and have demonstrated that we can grow the full range of alloys from AlN to InN at low temperatures. Here we extend these investigations to study the local environment and lattice site occupied by dopant atoms in such samples. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：218 / 221

页数：4

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