Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors

被引:15
作者
Lee, EJH
Pontes, FM
Leite, ER
Longo, E
Magnani, R
Pizani, PS
Varela, JA
机构
[1] Univ Fed Sao Carlos, Dept Chem, CMDMC, LIEC, BR-13565905 Sao Carlos, SP, Brazil
[2] Univ Fed Sao Carlos, Dept Phys, BR-13565905 Sao Carlos, SP, Brazil
[3] UNESP, Inst Chem, Araraquara, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
barium titanate; dielectric properties; conduction mechanism; post-annealing;
D O I
10.1016/j.matlet.2003.10.047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Barium titanate thin films were prepared by the polymeric precursor method and deposited onto Pt/Ti/SiO2/Si substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR) and micro-Raman spectroscopy were used to investigate the formation of the BaTiO3 perovskite phase. Afterwards, the films were submitted to post-annealing treatments in oxygen and nitrogen atmospheres at 300 degreesC for 2 h, and had their dielectric properties measured. It was observed that the electric properties of the thin films are very sensitive to the nature of the post-annealing atmosphere. This study demonstrates that post-annealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that post-annealing in a nitrogen atmosphere produces a slight dielectric relaxation. (C) 2004 Elsevier B.V All rights reserved.
引用
收藏
页码:1715 / 1721
页数:7
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