Precursor evaluation for in situ InP nanowire doping

被引：95

作者：

Borgstrom, M. T. ^{[1
]}

Norberg, E. ^{[1
]}

Wickert, P. ^{[1
]}

Nilsson, H. A. ^{[1
]}

Tragardh, J. ^{[1
]}

Dick, K. A. ^{[1
]}

Statkute, G. ^{[2
]}

Ramvall, P. ^{[1
]}

Deppert, K. ^{[1
]}

Samuelson, L. ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

[2] Aalto Univ, Dept Micro & Nanosci, FIN-02150 Espoo, Finland

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 44期

关键词：

D O I：

10.1088/0957-4484/19/44/445602

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.

引用

页数：6

共 31 条

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