Dynamic process of anti-Stokes photoluminescence at a long-range-ordered Ga0.5In0.5P/GaAs heterointerface

Efficient anti-Stokes photoluminescence (PL) has been observed in Ga0.5In0.5P and GaAs single heterostructure. PL of Ga0.5In0.5P was observed when photoexciting the Ga0.5In0.5P/GaAs interface. The anti-Stokes PL intensity from the Ga0.5In0.5P layer is about 1% of the GaAs FL. The observed anti-Stokes PL exhibits a characteristic intensity dependence in the double-logarithmic plot, which reveals two straight lines having slopes of about 2 and 4. Time-resolved measurements show that the anti-Stokes PL is described by two components: the rapid decay caused by the two-step two-photon absorption of the excitation laser light and the slower decay by energy transfer of electron-hole recombination energy in the GaAs. We found that many-particle effects in the GaAs under high excitations cause the characteristic intensity dependence of the anti-Stokes PL. [S0163-1829(99)05323-0].