Manipulating polar ferromagnetism in transition-metal-doped ZnO: Why manganese is different from cobalt (invited)

被引:37
作者
Kittilstved, Kevin R. [1 ]
Gamelin, Daniel R. [1 ]
机构
[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2167638
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-temperature magnetic ordering in Mn2+- and Co2+-doped ZnO diluted magnetic semiconductors has been predicted theoretically and confirmed experimentally to have different charge-carrier requirements. This paper summarizes some of these experimental and theoretical results and relates the different carrier polarity requirements for 300 K ferromagnetism in Mn2+:ZnO and Co2+:ZnO to differences in the charge-transfer electronic structures of these two materials. (C) 2006 American Institute of Physics.
引用
收藏
页数:6
相关论文
共 46 条
[1]   Donor impurity band exchange in dilute ferromagnetic oxides [J].
Coey, JMD ;
Venkatesan, M ;
Fitzgerald, CB .
NATURE MATERIALS, 2005, 4 (02) :173-179
[2]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[3]   Dilute magnetic semiconductors - Functional ferromagnets [J].
Dietl, T .
NATURE MATERIALS, 2003, 2 (10) :646-648
[4]   Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F .
PHYSICAL REVIEW B, 2001, 63 (19)
[5]   Injection and detection of a spin-polarized current in a light-emitting diode [J].
Fiederling, R ;
Keim, M ;
Reuscher, G ;
Ossau, W ;
Schmidt, G ;
Waag, A ;
Molenkamp, LW .
NATURE, 1999, 402 (6763) :787-790
[6]   Interface double-exchange ferromagnetism in the Mn-Zn-O system:: New class of biphase magnetism -: art. no. 217206 [J].
García, MA ;
Ruiz-González, ML ;
Quesada, A ;
Costa-Krämer, JL ;
Fernández, JF ;
Khatib, SJ ;
Wennberg, A ;
Caballero, AC ;
Martín-González, MS ;
Villegas, M ;
Briones, F ;
González-Calbet, JM ;
Hernando, A .
PHYSICAL REVIEW LETTERS, 2005, 94 (21)
[7]   Magnetic resonant tunnelling diodes as voltage-controlled spin selectors [J].
Gould, C ;
Slobodskyy, A ;
Slobodskyy, T ;
Grabs, P ;
Becker, CR ;
Schmidt, G ;
Molenkamp, LW .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03) :700-703
[8]   Magnetization steps in Zn1-xMnxO:: Four largest exchange constants and single-ion anisotropy -: art. no. 125209 [J].
Gratens, X ;
Bindilatti, V ;
Oliveira, NF ;
Shapira, Y ;
Foner, S ;
Golacki, Z ;
Haas, TE .
PHYSICAL REVIEW B, 2004, 69 (12)
[9]   Magnetism in Mn-doped ZnO bulk samples prepared by solid state reaction [J].
Han, SJ ;
Jang, TH ;
Kim, YB ;
Park, BG ;
Park, JH ;
Jeong, YH .
APPLIED PHYSICS LETTERS, 2003, 83 (05) :920-922
[10]   Effects of high-dose Mn implantation into ZnO grown on sapphire [J].
Heo, YW ;
Ivill, MP ;
Ip, K ;
Norton, DP ;
Pearton, SJ ;
Kelly, JG ;
Rairigh, R ;
Hebard, AF ;
Steiner, T .
APPLIED PHYSICS LETTERS, 2004, 84 (13) :2292-2294