Magnetic resonant tunnelling diodes as voltage-controlled spin selectors

被引：7

作者：

Gould, C ^{[1
]}

Slobodskyy, A ^{[1
]}

Slobodskyy, T ^{[1
]}

Grabs, P ^{[1
]}

Becker, CR ^{[1
]}

Schmidt, G ^{[1
]}

Molenkamp, LW ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 03期

关键词：

D O I：

10.1002/pssb.200304252

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the transport characteristics of all II-VI semiconductor resonant tunneling diodes made from the (Zn,Mn,Be)Se material system and with a quantum well of dilute magnetic material. The current-voltage characteristics of these devices exhibit a normal resonant tunneling diode resonance at zero external magnetic field. When a field is applied, the resulting spin splitting of the levels in the quantum well splits the transmission resonance into two separate peaks that move apart with increasing field. We interpret this as evidence that the tunneling is taking place through spin polarized levels. This device could therefore be viewed as a first step towards the demonstration of a voltage controlled spin filter. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：700 / 703

页数：4

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