OBSERVATION OF INTRINSIC TRISTABILITY IN A RESONANT-TUNNELING STRUCTURE

被引：62

作者：

MARTIN, AD ^{[1
]}

LERCH, MLF ^{[1
]}

SIMMONDS, PE ^{[1
]}

EAVES, L ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.110854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technique has been developed to probe the region of apparent bistability due to a tunneling resonance in the characteristic of a semiconductor asymmetric double-barrier structure. The measuring circuit uses a voltage supply designed to have a load line with positive slope, equivalent to a voltage source and negative series resistance. The appearance of bistability and hysteresis in the characteristic is an artifact of the conventional measuring technique, which employs a load line with negative slope. The complete characteristic is found to be a continuous Z-shaped curve between 50 and 150 K, corresponding to tristability. Equivalent circuit models for the device and voltage supply predict a narrow range of circuit parameters for which a static operating point exists inside the tristable region.

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页码：1248 / 1250

页数：3

相关论文

共 17 条

[1] IS INTRINSIC BISTABILITY REALLY INTRINSIC TRISTABILITY [J].

COON, DD ;

BANDARA, KMSV ;

ZHAO, H .

APPLIED PHYSICS LETTERS, 1989, 54 (21) :2115-2117

[2] ELECTRICAL AND SPECTROSCOPIC STUDIES OF SPACE-CHARGE BUILDUP, ENERGY RELAXATION AND MAGNETICALLY ENHANCED BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

EAVES, L ;

LEADBEATER, ML ;

HAYES, DG ;

ALVES, ES ;

SHEARD, FW ;

TOOMBS, GA ;

SIMMONDS, PE ;

SKOLNICK, MS ;

HENINI, M ;

HUGHES, OH .

SOLID-STATE ELECTRONICS, 1989, 32 (12) :1101-1108

[3] CURRENT BISTABILITY IN DOUBLE-BARRIER RESONANT-TUNNELING DEVICES [J].

FOSTER, TJ ;

LEADBEATER, ML ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

PAYLING, CA ;

SHEARD, FW ;

SIMMONDS, PE ;

TOOMBS, GA ;

HILL, G ;

PATE, MA .

PHYSICAL REVIEW B, 1989, 39 (09) :6205-6207

[4] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - REPLY [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 59 (14) :1623-1623

[5] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[6] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J].

GOODHUE, WD ;

SOLLNER, TCLG ;

LE, HQ ;

BROWN, ER ;

VOJAK, BA .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1086-1088

[7] OBSERVATION OF SPACE-CHARGE BUILDUP AND THERMALIZATION IN AN ASYMMETRIC DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE [J].

LEADBEATER, ML ;

ALVES, ES ;

SHEARD, FW ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

TOOMBS, GA .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (51) :10605-10611

[8] CHARGE BUILDUP AND INTRINSIC BISTABILITY IN AN ASYMMETRIC RESONANT-TUNNELING STRUCTURE [J].

LEADBEATER, ML ;

ALVES, ES ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

SHEARD, FW ;

TOOMBS, GA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) :1060-1062

[9]

LEADBEATER ML, 1990, THESIS U NOTTINGHAM

[10] CIRCUIT SIMULATION OF RESONANT TUNNELING DOUBLE-BARRIER DIODE [J].

LIU, HC .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4792-4794