Synthesis of a Si-clathrate compound, Sr8GaxSi46-x, and its electrical resistivity measurements

被引：24

作者：

Imai, M ^{[1
]}

Nishida, K ^{[1
]}

Kimura, T ^{[1
]}

Yamada, K ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Mat Engn Lab, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2002年 / 335卷 / 1-2期

关键词：

clathrate compounds; crystal growth; crystal structure; X-ray diffraction; electrical transport;

D O I：

10.1016/S0925-8388(01)01840-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Si-clathrate compounds, Sr8GaxSi46-x (x=11 and 12), were synthesized by two methods: Ar-arc melting and floating-zone melting. The Ar-arc melting of a mixture of SrSi2, Ga, and Si resulted in multiphase samples including the Si-clathrate, Sr8Ga12Si34. A single-phase Sr8Ga11Si35 was synthesized by floating-zone melting. Powder X-ray-diffraction patterns and precession photographs indicate that Sr8Ga11Si35 is a type-I clathrate with a lattice constant of a=10.4075(3) Angstrom. Sr8Ga11Si35 is a metal whose dominant carriers are electrons, and it does not show superconductivity down to 2 K. (C) 2002 Elsevier Science BV All rights reserved.

引用

页码：270 / 276

页数：7

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