Ultrasound barrier microsystem for object detection based on micromachined transducer elements

被引:15
作者
Brand, O
Hornung, M
Baltes, H
Hafner, C
机构
[1] ETH ZURICH,PHYS ELECT LAB,CH-8093 ZURICH,SWITZERLAND
[2] BAUMER ELECT AG,CH-8500 FRAUENFELD,SWITZERLAND
关键词
electrothermal actuation; membrane resonator; object detection; packaged microsystem; resonators; ultrasound transducer;
D O I
10.1109/84.585793
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work reports on the fabrication, characterization, and encapsulation of micromachined membrane resonators for ultrasound generation and detection. Based on the encapsulated 1 x 1-mm membrane resonators, an ultrasound barrier microsystem for short-distance object detection including the necessary driving circuitry has been developed. Using the ultrasound principle, the barrier microsystem is able to detect, e.g., optically transparent objects. The membrane resonators are fabricated using an industrial silicon technology compatible with bipolar integrated circuit (IC) technology in combination with a postprocessing etching step. Because of the compatibility with IC fabrication technology, the membranes feature electrothermal excitation and piezoresistive detection of transverse vibrations. For the generation of ultrasound, membranes, which exhibit a slight initial buckling due to fabrication-induced compressive stresses, are best suited. At the fundamental resonance frequency f = 87 kHz, maximum sound-pressure amplitudes up to 0.25 Pa San be achieved at 50-mm distance. With the piezoresistors arranged in a Wheatstone bridge, a sensitivity for the detection of sound at the resonance S-sound = 2 mu V/mPa (for an applied bias voltage of 5 V) is obtained. To protect the membranes from the environment, they are covered by a metal cap with a periodic grid of holes and a thin, porous membrane. With this encapsulation approach, the generated sound pressure in forward direction is only slightly lowered, while the total beam angle (approximate to 80 degrees) of the generated sound field is distinctly reduced. [231]
引用
收藏
页码:151 / 160
页数:10
相关论文
共 26 条
[1]   CMOS AS SENSOR TECHNOLOGY [J].
BALTES, H .
SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :51-56
[2]  
BALTES H, 1993, P 24 EUR SOL STAT DE, P273
[3]   THERMALLY EXCITED RESONATING MEMBRANE MASS-FLOW SENSOR [J].
BOUWSTRA, S ;
KEMNA, P ;
LEGTENBERG, R .
SENSORS AND ACTUATORS, 1989, 20 (03) :213-223
[4]  
BOUWSTRA S, TRANSD 91, P538
[5]  
BRAND O, 1994, THESIS ETH ZURICH ZU
[6]  
BRAND O, P IEEE MICR EL MECH, P33
[7]  
BRAND O, TRANSD 93, P646
[8]  
HEUBERGER A, 1989, MIKROMECHANIK
[9]   B-MODE IMAGING USING SI ULTRASONIC IMAGE SENSOR [J].
HIGUCHI, K ;
SUZUKI, K ;
TANIGAWA, H ;
HORIGUCHI, T ;
TAKANASHI, N .
SENSORS AND ACTUATORS A-PHYSICAL, 1990, 22 (1-3) :683-686
[10]  
HORNUNG M, TRANSD 95, P620