CMOS AS SENSOR TECHNOLOGY

被引：76

作者：

BALTES, H

机构：

[1] Physical Electronics Laboratory, ETH Zurich, Hoenggerberg HPT

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1993年 / 37-8卷

关键词：

D O I：

10.1016/0924-4247(93)80011-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sensor design and fabrication using industrial IC technologies has the advantages of batch fabrication and on-chip interface circuitry. Sensors made by CMOS or bipolar IC technology have been demonstrated for magnetic, temperature and radiation measurands. Certain thermal, mechanical and chemical sensors can be realized by combining IC technologies with additional, compatible processing. We distinguish the methods of multiple project wafers, single project wafers, post-processing IC chips or wafers, and IC fabrication merged with sensor processing performed before, after, and in-between the regular IC processing steps. This paper is focused on sensor prototypes realized by industrial CMOS IC technology with post-processing micromachining. Examples include thermally excited acoustic resonators, thermoelectric gas flow, infrared, and power sensors, and a thermal conductivity sensor.

引用

页码：51 / 56

页数：6

共 27 条

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SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :527-533

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