Nanostructure of GaN and SiC nanowires based on carbon nanotubes

被引:102
作者
Zhu, J [1 ]
Fan, S [1 ]
机构
[1] Tsing Hua Univ, Sch Mat Sci & Engn, Electron Microscopy Lab, Beijing 100084, Peoples R China
关键词
D O I
10.1557/JMR.1999.0156
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nanostructure of GaN and SiC nanowires produced by carbon nanotube confined reaction has been studied by means of high-resolution electron microscopy, microanalysis, and microdiffraction. The GaN nanowire is a single crystal with fewer defects and the SiC nanowire is a beta-sic crystal with heavy layer sequence faults. Considering experimental results, a possible reaction path for making GaN is suggested.
引用
收藏
页码:1175 / 1177
页数:3
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