Nanostructure of GaN and SiC nanowires based on carbon nanotubes
被引:102
作者:
Zhu, J
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Tsing Hua Univ, Sch Mat Sci & Engn, Electron Microscopy Lab, Beijing 100084, Peoples R ChinaTsing Hua Univ, Sch Mat Sci & Engn, Electron Microscopy Lab, Beijing 100084, Peoples R China
Zhu, J
[1
]
Fan, S
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Tsing Hua Univ, Sch Mat Sci & Engn, Electron Microscopy Lab, Beijing 100084, Peoples R ChinaTsing Hua Univ, Sch Mat Sci & Engn, Electron Microscopy Lab, Beijing 100084, Peoples R China
Fan, S
[1
]
机构:
[1] Tsing Hua Univ, Sch Mat Sci & Engn, Electron Microscopy Lab, Beijing 100084, Peoples R China
The nanostructure of GaN and SiC nanowires produced by carbon nanotube confined reaction has been studied by means of high-resolution electron microscopy, microanalysis, and microdiffraction. The GaN nanowire is a single crystal with fewer defects and the SiC nanowire is a beta-sic crystal with heavy layer sequence faults. Considering experimental results, a possible reaction path for making GaN is suggested.