Pulsed- and continuous-mode operation at high temperature of strained quantum-cascade lasers grown by metalorganic vapor phase epitaxy -: art. no. 041102

被引：24

作者：

Diehl, L

Bour, D

Corzine, S

Zhu, J

Höfler, G

Lee, BG

Wang, CY

Troccoli, M

Capasso, F

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cruft Lab 310, Cambridge, MA 02138 USA

[2] Agilent Labs, Photon & Elect Res Lab, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.2166206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the pulsed operation at room temperature of different strained InGaAs/AlInAs quantum-cascade lasers grown by low-pressure metalorganic vapor-phase epitaxy. Devices based on a bound-to-continuum transition design have threshold current densities in pulsed mode as low as 1.84 kA/cm(2) at 300 K. Identical lasers grown at higher rate (0.5 nm/s) also have threshold current densities lower than 2 kA/cm(2) at 300 K. Buried heterostructure lasers based on a double phonon resonance design were operated in continuous mode up to 280 K. Overall, the performance obtained from strained quantum cascade lasers deposited by metalorganic vapor-phase epitaxy are comparable with that of similar structures grown by molecular beam epitaxy. (c) 2006 American Institute of Physics.

引用

收藏

页码：1 / 3

页数：3

相关论文

共 9 条

[1] Room-temperature, continuous-wave, single-mode quantum-cascade lasers at λ≃5.4 μm -: art. no. 041109 [J].

Blaser, S ;

Yarekha, DA ;

Hvozdara, L ;

Bonetti, Y ;

Muller, A ;

Giovannini, M ;

Faist, J .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :041109-1

[2] Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers [J].

Bour, D ;

Troccoli, M ;

Capasso, F ;

Corzine, S ;

Tandon, A ;

Mars, D ;

Höfler, G .

JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :526-530

[3] Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs [J].

Faist, J ;

Capasso, F ;

Sivco, DL ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :680-682

[4] High-performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy [J].

Green, RP ;

Wilson, LR ;

Zibik, EA ;

Revin, DG ;

Cockburn, JW ;

Pflügl, C ;

Schrenk, W ;

Strasser, G ;

Krysa, AB ;

Roberts, JS ;

Tey, CM ;

Cullis, AG .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5529-5531

[5] High-temperature operation of distributed feedback quantum-cascade lasers at 5.3 μm [J].

Hofstetter, D ;

Beck, M ;

Aellen, T ;

Faist, J .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :396-398

[6] Chemical sensors based on quantum cascade lasers [J].

Kosterev, AA ;

Tittel, FK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (06) :582-591

[7] Low-threshold continuous-wave operation of quantum-cascade lasers grown by metalorganic vapor phase epitaxy [J].

Troccoli, M ;

Bour, D ;

Corzine, S ;

Höfler, G ;

Tandon, A ;

Mars, D ;

Smith, DJ ;

Diehl, L ;

Capasso, F .

APPLIED PHYSICS LETTERS, 2004, 85 (24) :5842-5844

[8] Continuous-wave operation of quantum cascade laser emitting near 5.6 μm [J].

Yarekha, DA ;

Beck, M ;

Blaser, S ;

Aellen, T ;

Gini, E ;

Hofstetter, D ;

Faist, J .

ELECTRONICS LETTERS, 2003, 39 (15) :1123-1125

[9] High-power, room-temperature, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ∼4.8 μm -: art. no. 041104 [J].

Yu, JS ;

Slivken, S ;

Darvish, SR ;

Evans, A ;

Gokden, B ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2005, 87 (04)