High-performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy

被引：31

作者：

Green, RP ^{[1
]}

Wilson, LR

Zibik, EA

Revin, DG

Cockburn, JW

Pflügl, C

Schrenk, W

Strasser, G

Krysa, AB

Roberts, JS

Tey, CM

Cullis, AG

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Vienna Univ Technol, Zentrum Mikro & Nanostrukturen, A-1040 Vienna, Austria

[3] Univ Sheffield, EPSRC Natl Ctr 3 5 Technol, Sheffield S1 3JD, S Yorkshire, England

[4] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期

基金：

英国工程与自然科学研究理事会; 奥地利科学基金会;

关键词：

D O I：

10.1063/1.1830072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the operation of distributed feedback quantum cascade lasers, grown by metalorganic vapor phase epitaxy. Single-mode laser emission at lambdasimilar to10.3 mum and lambdasimilar to7.8 mum is observed from two different samples, with 300 K threshold current densities of J(th)similar to3 and similar to2.4 kA cm(-2), respectively. Structural investigation by x-ray diffraction and transmission electron microscopy, and the close correlation between the predicted and observed emission wavelengths indicate exceptional control of the layer thicknesses, including ultrathin (similar to8 A) barrier layers in the active region. These results confirm metalorganic vapor phase epitaxy as a viable technology for the growth of high-performance quantum cascade lasers. (C) 2004 American Institute of Physics.

引用

页码：5529 / 5531

页数：3

共 9 条

[1] HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF SEMICONDUCTOR SUPERLATTICES [J].

BARNETT, SJ .

JOURNAL OF CRYSTAL GROWTH, 1990, 103 (1-4) :335-343

[2] Continuous wave operation of a mid-infrared semiconductor laser at room temperature [J].

Beck, M ;

Hofstetter, D ;

Aellen, T ;

Faist, J ;

Oesterle, U ;

Ilegems, M ;

Gini, E ;

Melchior, H .

SCIENCE, 2002, 295 (5553) :301-305

[3] Analysis of TM-Polarized DFB laser structures with metal surface gratings [J].

Finger, N ;

Schrenk, W ;

Gornik, E .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (07) :780-786

[4] Recent progress in quantum cascade lasers and applications [J].

Gmachl, C ;

Capasso, F ;

Sivco, DL ;

Cho, AY .

REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (11) :1533-1601

[5] Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy [J].

Green, RP ;

Krysa, A ;

Roberts, JS ;

Revin, DG ;

Wilson, LR ;

Zibik, EA ;

Ng, WH ;

Cockburn, JW .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :1921-1922

[6] Demonstration of high-performance 10.16 μm quantum cascade distributed feedback lasers fabricated without epitaxial regrowth [J].

Hofstetter, D ;

Faist, J ;

Beck, M ;

Müller, A ;

Oesterle, U .

APPLIED PHYSICS LETTERS, 1999, 75 (05) :665-667

[7] MOVPE-grown quantum cascade lasers operating at ∼9 μm wavelength [J].

Krysa, AB ;

Roberts, IS ;

Green, RP ;

Wilson, LR ;

Page, H ;

Garcia, M ;

Cockburn, JW .

JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :682-685

[8] Digital alloy interface grading of an InAlAs/InGaAs quantum cascade laser structure studied by cross-sectional scanning tunneling microscopy [J].

Offermans, P ;

Koenraad, PM ;

Wolter, JH ;

Beck, M ;

Aellen, T ;

Faist, J .

APPLIED PHYSICS LETTERS, 2003, 83 (20) :4131-4133

[9] Quantum cascade lasers grown by metalorganic vapor phase epitaxy [J].

Roberts, JS ;

Green, RP ;

Wilson, LR ;

Zibik, EA ;

Revin, DG ;

Cockburn, JW ;

Airey, RJ .

APPLIED PHYSICS LETTERS, 2003, 82 (24) :4221-4223

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