Quantum cascade lasers grown by metalorganic vapor phase epitaxy

We report the growth of GaAs-based quantum cascade lasers using atmospheric pressure metalorganic vapor phase epitaxy. The necessary control of interface abruptness and layer thickness uniformity throughout the structure has been achieved using a horizontal reactor in combination with individually purged vent/run valves. A low-temperature threshold current density of 10 kA/cm(2) and maximum operating temperature of 140 K have been measured. These performance levels are comparable with early GaAs-based devices grown using molecular-beam epitaxy. The measured emission wavelength (lambdasimilar to11.8 mum) is approximately 3-mum longer than the calculated transition wavelength, which we explain using a model incorporating compositional grading of the active region barriers. (C) 2003 American Institute of Physics.