GaAs/AlxGa1-x as quantum cascade lasers

被引：378

作者：

Sirtori, C

Kruck, P

Barbieri, S

Collot, P

Nagle, J

Beck, M

Faist, J

Oesterle, U

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

[2] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

[3] Ecole Polytech Fed Lausanne, Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A unipolar injection quantum cascade (QC) laser grown in an AlGaAs/GaAs material system by molecular beam epitaxy, is reported. The active material is a 30 period sequence of injectors/active regions made from Al0.33Ga0.67As/GaAs-coupled quantum wells. For this device a special waveguide design, which complies with a GaAs heavily doped substrate and very short Al0.90Ga0.10As cladding layers, has been optimized. At a heat-sink temperature of 77 K, the laser emission wavelength is 9.4 mu m with peak optical power exceeding 70 mW and the threshold current density is 7.3 kA/cm(2). The maximum operating temperature is 140 K. This work experimentally demonstrates the general validity of QC laser principles by showing laser action in a heterostructure material different from the one used until now. (C) 1998 American Institute of Physics. [S0003-6951(98)01150-4].

引用

页码：3486 / 3488

页数：3

共 17 条

[1] Femtosecond infrared emission resulting from coherent charge oscillations in quantum wells [J].