High-power long-wavelength (λ∼11.5 μm) quantum cascade lasers operating above room temperature

被引:41
作者
Faist, J [1 ]
Sirtori, C [1 ]
Capasso, F [1 ]
Sivco, DL [1 ]
Baillargeon, JN [1 ]
Hutchinson, AL [1 ]
Cho, AY [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
environmental sensing; intersubband transition; midinfrared; resonant tunneling; unipolar semiconductor laser;
D O I
10.1109/68.701515
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-temperature operation (T = 320 K) of quantum cascade lasers has been extended to 11.5-mu m wavelengths with high performances. Peak-pulsed optical power of 55 mW is obtained at 300 K with a high T-0 = 172 K, in good agreement with our theoretical model.
引用
收藏
页码:1100 / 1102
页数:3
相关论文
共 13 条
  • [1] 175 K continuous wave operation of InAsSb/InAIAsSb quantum-well diode lasers emitting at 3.5 mu m
    Choi, HK
    Turner, GW
    Manfra, MJ
    Connors, MK
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (21) : 2936 - 2938
  • [2] Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
    Chow, DH
    Miles, RH
    Hasenberg, TC
    Kost, AR
    Zhang, YH
    Dunlap, HL
    West, L
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3700 - 3702
  • [3] QUANTUM CASCADE LASER
    FAIST, J
    CAPASSO, F
    SIVCO, DL
    SIRTORI, C
    HUTCHINSON, AL
    CHO, AY
    [J]. SCIENCE, 1994, 264 (5158) : 553 - 556
  • [4] High power mid-infrared (lambda greater than or similar to-5 mu m) quantum cascade lasers operating above room temperature
    Faist, J
    Capasso, F
    Sirtori, C
    Sivco, DL
    Baillargeon, JN
    Hutchinson, AL
    Chu, SNG
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (26) : 3680 - 3682
  • [5] High-temperature 4.5-mu m type-II quantum-well laser with Auger suppression
    Felix, CL
    Meyer, JR
    Vurgaftman, I
    Lin, CH
    Murry, SJ
    Zhang, D
    Pei, SS
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (06) : 734 - 736
  • [6] Theory of the spectral line shape and gain in quantum wells with intersubband transitions
    Gelmont, B
    Gorfinkel, V
    Luryi, S
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (16) : 2171 - 2173
  • [7] Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 mu m grown by metal-organic chemical vapor deposition
    Lane, B
    Wu, D
    Rybaltowski, A
    Yi, H
    Diaz, J
    Razeghi, M
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (04) : 443 - 445
  • [8] MIDINFRARED LEAD SALT MULTI-QUANTUM-WELL DIODE-LASERS WITH 282 K OPERATION
    SHI, Z
    TACKE, M
    LAMBRECHT, A
    BOTTNER, H
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2537 - 2539
  • [9] Mid-infrared (8.5 mu m) semiconductor lasers operating at room temperature
    Sirtori, C
    Faist, J
    Capasso, F
    Sivco, DL
    Hutchinson, AL
    Cho, AY
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (03) : 294 - 296
  • [10] Long wavelength infrared (lambda similar or equal to 11 mu m) quantum cascade lasers
    Sirtori, C
    Faist, J
    Capasso, F
    Sivco, DL
    Hutchinson, AL
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (19) : 2810 - 2812