Mid-infrared (8.5 mu m) semiconductor lasers operating at room temperature

被引：69

作者：

Sirtori, C ^{[1
]}

Faist, J ^{[1
]}

Capasso, F ^{[1
]}

Sivco, DL ^{[1
]}

Hutchinson, AL ^{[1
]}

Cho, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 03期

关键词：

D O I：

10.1109/68.556051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The room-temperature pulsed operation of a semiconductor laser emitting at 8.5 mu m is reported. This device is an optimized vertical transition quantum cascade (QC) laser. At 300 K the peak output power from a single facet is 15 mW, and the current density at threshold is similar to 8 kA/cm(2). The temperature dependence of the threshold current density is described by a high T-o (107 K) in the 200-320 K temperature range.

引用

页码：294 / 296

页数：3

共 9 条

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