Type II mid-IR lasers operating above room temperature

被引：40

作者：

Malin, JI ^{[1
]}

Felix, CL ^{[1
]}

Meyer, JR ^{[1
]}

Hoffman, CA ^{[1
]}

Pinto, JF ^{[1
]}

Lin, CH ^{[1
]}

Chang, PC ^{[1
]}

Murry, SJ ^{[1
]}

Pei, SS ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 17期

关键词：

semiconductor junction lasers; semiconductor quantum wells; optical pumping;

D O I：

10.1049/el:19961057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser emission at lambda=3.2 mu m has been observed for temperatures up to 350K in pulsed optical pumping experiments on type-II quantum well lasers with four-constituents in each period (InAs-Ga0.7Sb-InAs-AlSb). The characteristic temperature is 68K, and peak output powers of up to 270mW are obtained for ambient-temperature operation.

引用

页码：1593 / 1595

页数：3

共 8 条

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