NEAR-ROOM-TEMPERATURE OPERATION OF PB1-XSRXSE INFRARED DIODE-LASERS USING MOLECULAR-BEAM EPITAXY GROWTH TECHNIQUES

被引：47

作者：

SPANGER, B

SCHIESSL, U

LAMBRECHT, A

BOTTNER, H

TACKE, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2582 / 2583

页数：2

共 11 条

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[3]

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[4] SINGLE QUANTUM WELL LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS [J].

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[7] DIODE-LASERS OF LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8] LEAD STRONTIUM TELLURIDE AND LEAD BARIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[9] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J].

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[10]

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