LEAD STRONTIUM TELLURIDE AND LEAD BARIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

PARTIN, DL

THRUSH, CM

CLEMENS, BM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：686 / 689

页数：4

共 22 条

[1] SOME PHYSICAL PROPERTIES OF PBTE-MGTE ALLOY SYSTEM [J].

CROCKER, AJ ;

SEALY, BJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (12) :2183-+

[2]

GOLTSOS W, 1984, B AM PHYS SOC, V29, P305

[3] OPTICAL PROPERTIES OF CADMIUM SULFIDE AND ZINC SULFIDE FROM 0.6-MICRON TO 14-MICRONS [J].

HALL, JF ;

FERGUSON, WFC .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1955, 45 (09) :714-718

[4] LEAD STRONTIUM SULFIDE AND LEAD CALCIUM SULFIDE, 2 NEW ALLOY SEMICONDUCTORS [J].

HOLLOWAY, H ;

JESION, G .

PHYSICAL REVIEW B, 1982, 26 (10) :5617-5622

[5] MBE TECHNIQUES FOR IV-VI OPTOELECTRONIC DEVICES [J].

HOLLOWAY, H ;

WALPOLE, JN .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :49-94

[6]

KLUG HP, 1974, XRAY DIFFRACTION PRO, P594

[7] LEAD RARE-EARTH CHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY [J].

PARTIN, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :174-177

[8] GROWTH OF LEAD-GERMANIUM-TELLURIDE THIN-FILM STRUCTURES BY MOLECULAR-BEAM EPITAXY [J].

PARTIN, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :1-5

[9] WAVELENGTH COVERAGE OF LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS [J].

PARTIN, DL ;

THRUSH, CM .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :193-195

[10] LEAD SALT QUANTUM WELL DIODE-LASERS [J].

PARTIN, DL .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (02) :131-135

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