SINGLE QUANTUM WELL LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS

被引：47

作者：

PARTIN, DL

机构：

来源：

关键词：

D O I：

10.1063/1.95310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：487 / 489

页数：3

共 10 条

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[2]

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[5] LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY [J].

PARTIN, DL .

PARTIN, DL ;

MAJKOWSKI, RF ;

THRUSH, CM .

PARTIN, DL .

[8]

PARTIN DL, 1983, AUG SPIE C TUN DIOD, V438

[9] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J].

PREIER, H .

APPLIED PHYSICS, 1979, 20 (03) :189-206

[10]

SCHIFF LI, 1949, QUANTUM MECHANICS, P41