High-temperature 4.5-mu m type-II quantum-well laser with Auger suppression

被引:54
作者
Felix, CL [1 ]
Meyer, JR [1 ]
Vurgaftman, I [1 ]
Lin, CH [1 ]
Murry, SJ [1 ]
Zhang, D [1 ]
Pei, SS [1 ]
机构
[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204
基金
美国国家航空航天局;
关键词
optical pumping; pulsed lasers; quantum-well lasers; semiconductor device measurements; semiconductor device modeling; semiconductor lasers; wavelength measurement;
D O I
10.1109/68.584973
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Laser emission at 4.2-4.5 mu m has been observed at temperatures up to 310 K in pulsed optical pumping experiments on type-II quantum-well (QW) lasers with four constituents in each period (InAs-Ga1-xInxSb-InAs-AlSb). The characteristic temperature, T-0, is 41 K, and a peak output power exceeding 2 W/facet is observed at 200 K, The power conversion efficiency per facet of approximate to 0.2% up to 200 K is within a factor of 2 of the theoretical value, The 300 K Auger coefficient of 4 x 10(-27) cm(6)/s extracted from the threshold pump intensity demonstrates that Auger losses have been suppressed by a factor of four.
引用
收藏
页码:734 / 736
页数:3
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