AUGER LIFETIME IN INAS, INASSB, AND INASSB-INALASSB QUANTUM-WELLS

被引:55
作者
LINDLE, JR [1 ]
MEYER, JR [1 ]
HOFFMAN, CA [1 ]
BARTOLI, FJ [1 ]
TURNER, GW [1 ]
CHOI, HK [1 ]
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
关键词
D O I
10.1063/1.115146
中图分类号
O59 [应用物理学];
学科分类号
摘要
The intensity-dependent photoconductive response to 2.06 mu m excitation has been used to determine Shockley-Read and Auger lifetimes for InAs, InAs0.91Sb0.09, and an InAs0.85 Sb-0.15-InAlAsSb multiple quantum well. The Auger rate at 77 K correlates with the proximity to resonance between the energy gap and the split-off gap. Thus the Auger coefficient in the alloy decreases with decreasing temperature, whereas that in the quantum well increases by nearly a factor of 5 between 300 and 77 K. (C) 1995 American Institute of Physics.
引用
收藏
页码:3153 / 3155
页数:3
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