Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding

被引：6

作者：

Green, RP ^{[1
]}

Wilson, LR

Carder, DA

Cockburn, JW

Hopkinson, M

Steer, MJ

Airey, RJ

Hill, G

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, EPSRC Cent Facil 3 5 Mat, Dept Elect & Elect Engn, Sheffield S3 1JD, S Yorkshire, England

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 24期

关键词：

D O I：

10.1049/el:20021080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs-based quantum cascade laser utilising lattice matched Ga0.51In0.49P waveguide cladding is reported. Room temperature operation at a wavelength). lambda similar or equal to 9.8 mum has been demonstrated, with threshold current densities similar to6 kAcm(-2) at 12 K rising to similar to37 kAcm(-2) at room temperature. A characteristic temperature T-0 similar to 105 K was obtained between 2 10 and 305 K. It is predicted that optimised GaInP waveguides can offer significantly lower loss than those based on either GaAs or AlGaAs.

引用

页码：1539 / 1541

页数：3

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