Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy

被引：27

作者：

Green, RP ^{[1
]}

Krysa, A

Roberts, JS

Revin, DG

Wilson, LR

Zibik, EA

Ng, WH

Cockburn, JW

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England

[3] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1609055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the room-temperature operation of lambdaapproximate to8.5 mum InGaAs/AlInAs quantum cascade lasers, grown by low-pressure metalorganic vapor phase epitaxy. The necessary control of interfacial abruptness and layer thicknesses was achieved by the use of individually purged vent/run valves and a growth rate of 0.8 mum/h for the active region. Low-temperature threshold current densities of similar to1.5 kA cm(-2) and a maximum operating temperature of 290 K have been measured in pulsed operation. These values are comparable with those reported for structures of a similar design grown using molecular beam epitaxy. (C) 2003 American Institute of Physics.

引用

页码：1921 / 1922

页数：2

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