Characterising differences between measurement and calibration wafer in probe-tip calibrations

被引：16

作者：

Carchon, G

Nauwelaers, B

De Raedt, W

Schreurs, D

Vandenberghe, S

机构：

[1] Katholieke Univ Leuven, TELEMIC, ESAT, B-3001 Heverlee, Belgium

[2] IMEC, Div MCP MCM, B-3001 Heverlee, Belgium

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 13期

关键词：

D O I：

10.1049/el:19990731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general method to compensate for differences in probe-tip-to-line geometry and substrate permittivity between measurements and the calibration wafer is presented. The propagation constant, characteristic impedance and parameters of a general lumped-element equivalent discontinuity model are extracted at each frequency point based on measurements of two lines with different lengths.

引用

页码：1087 / 1088

页数：2

共 4 条

[1]

Carchon G., 1998, 28th European Microwave Conference Proceedings, P673, DOI 10.1109/EUMA.1998.338236

[2] THRU-REFLECT-LINE - IMPROVED TECHNIQUE FOR CALIBRATING THE DUAL 6-PORT AUTOMATIC NETWORK ANALYZER [J].

ENGEN, GF ;

HOER, CA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (12) :987-993

[3]

HEMANN P, 1994, IEEE MTT S, P1045

[4] IMPROVED CALIBRATION AND MEASUREMENT OF THE SCATTERING PARAMETERS OF MICROWAVE INTEGRATED-CIRCUITS [J].

PANTOJA, RR ;

HOWES, MJ ;

RICHARDSON, JR ;

POLLARD, RD .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (11) :1675-1680

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