Continuous random network at the silica surface

The continuous random network model for amorphous or liquid silica is proven to be valid for the bulk but the situation at the amorphous silica surface is still unclear. It is shown by molecular-dynamics computer simulation that this model is Valid also at the surface of amorphous silica. This was achieved by annealing with a cooling rate inversly proportional to the structural relaxation time. It is shown that the constant of proportionality has an optimum value that minimizes the concentration of nonequilibrium defects. [S0163-1829(99)05239-X].