FINITE-TEMPERATURE PROPERTIES OF AMORPHOUS-SILICON

被引：92

作者：

DRABOLD, DA

FEDDERS, PA

KLEMM, S

SANKEY, OF

机构：

[1] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556

[2] WASHINGTON UNIV,DEPT PHYS,ST LOUIS,MO 63130

[3] MINNESOTA SUPERCOMP CTR INC,MINNEAPOLIS,MN 55415

[4] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.67.2179

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ab initio local-orbital quantum molecular dynamics is used to study the finite-temperature properties of amorphous silicon. Using two structural models of a-Si with 63 and 216 atoms, we examine the structure and temperature dependence of conduction and valence band tails. An explanation is suggested for the recent experimental observations of an asymmetry in the temperature dependence of the band-tail widths of the conduction and valence bands in a-Si. Finally, we connect these simulations to other theoretical descriptions of band tailing.

引用

页码：2179 / 2182

页数：4

共 10 条

[1] BAND TAILS IN HYDROGENATED AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS [J].