STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS

[1] INTERBAND ABSORPTION-SPECTRA OF DISORDERED SEMICONDUCTORS IN THE COHERENT POTENTIAL APPROXIMATION [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (07) : 2185 - 2194

[2] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (25) : 1755 - 1758

[3] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[4] ADLER D, 1984, AIP C P, V120, P70

[5] ALLAN DC, 1984, SPRINGER TOPICS APPL, V55

[6] DANGLING BOND IN A SI-H [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2203 - 2206

[7] BARYAM Y, 1985, J ELECTRON MATER A, V14, P261

[8] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[9] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .2. HIGHER ORDER CORRECTIONS [J]. PHYSICAL REVIEW, 1967, 153 (03): : 802 - +

[10] KASTNER MA, 1985, J NON-CRYST SOLIDS, V77-8, P1173, DOI 10.1016/0022-3093(85)90868-3

[1] INTERBAND ABSORPTION-SPECTRA OF DISORDERED SEMICONDUCTORS IN THE COHERENT POTENTIAL APPROXIMATION [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (07) : 2185 - 2194

[2] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (25) : 1755 - 1758

[3] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[4] ADLER D, 1984, AIP C P, V120, P70

[5] ALLAN DC, 1984, SPRINGER TOPICS APPL, V55

[6] DANGLING BOND IN A SI-H [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2203 - 2206

[7] BARYAM Y, 1985, J ELECTRON MATER A, V14, P261

[8] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[9] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .2. HIGHER ORDER CORRECTIONS [J]. PHYSICAL REVIEW, 1967, 153 (03): : 802 - +

[10] KASTNER MA, 1985, J NON-CRYST SOLIDS, V77-8, P1173, DOI 10.1016/0022-3093(85)90868-3