Blocking reactions between indium-tin oxide and poly (3,4-ethylene dioxythiophene):poly(styrene sulphonate) with a self-assembly monolayer

被引:333
作者
Wong, KW
Yip, HL
Luo, Y
Wong, KY
Lau, WM [1 ]
Low, KH
Chow, HF
Gao, ZQ
Yeung, WL
Chang, CC
机构
[1] Chinese Univ Hong Kong, Dept Phys & Mat Sci, Shatin, Hong Kong, Peoples R China
[2] Chinese Univ Hong Kong, Technol Res Ctr, Shatin, Hong Kong, Peoples R China
[3] Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China
[4] Varitronix Ltd, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.1469220
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the fabrication of polymeric electroluminescent devices with indium-tin oxide (ITO) as anode, indium contamination of the polymers can greatly degrade the device performance. In the present study, we have used x-ray photoelectron spectroscopy to measure indium incorporation in poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate), referred to as PEDOT:PSS, which were spincast on bare ITO and encapsulated ITO. We found that the deposition of a self-assembled monolayer of alkylsiloxanes on ITO prior to spincasting PEDOT:PSS was effective and practical in blocking the reactions between ITO and PEDOT:PSS. (C) 2002 American Institute of Physics.
引用
收藏
页码:2788 / 2790
页数:3
相关论文
共 22 条
  • [1] Burroughes J. H., 1990, NATURE, V347, P29
  • [2] Polymeric anodes for improved polymer light-emitting diode performance
    Carter, SA
    Angelopoulos, M
    Karg, S
    Brock, PJ
    Scott, JC
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (16) : 2067 - 2069
  • [3] Enhanced luminance in polymer composite light emitting devices
    Carter, SA
    Scott, JC
    Brock, PJ
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1145 - 1147
  • [4] Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes
    de Jong, MP
    van IJzendoorn, LJ
    de Voigt, MJA
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (14) : 2255 - 2257
  • [5] Fine tuning work function of indium tin oxide by surface molecular design: Enhanced hole injection in organic electroluminescent devices
    Ganzorig, C
    Kwak, KJ
    Yagi, K
    Fujihira, M
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (02) : 272 - 274
  • [6] Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride
    Hirose, Y
    Kahn, A
    Aristov, V
    Soukiassian, P
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (02) : 217 - 219
  • [7] Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA
    Hirose, Y
    Kahn, A
    Aristov, V
    Soukiassian, P
    Bulovic, V
    Forrest, SR
    [J]. PHYSICAL REVIEW B, 1996, 54 (19): : 13748 - 13758
  • [8] Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier
    Huang, MB
    McDonald, K
    Keay, JC
    Wang, YQ
    Rosenthal, SJ
    Weller, RA
    Feldman, LC
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (20) : 2914 - 2916
  • [9] KARG S, 1997, SYNTHETIC MET, V91, P99
  • [10] Metal diffusion from electrodes in organic light-emitting diodes
    Lee, ST
    Gao, ZQ
    Hung, LS
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1404 - 1406