Er doped nanocrystalline ZnO planar waveguide structures for 1.55 μm amplifier applications

被引：80

作者：

Mais, N ^{[1
]}

Reithmaier, JP

Forchel, A

Kohls, M

Spanhel, L

Müller, G

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Univ Wurzburg, Lehrstuhl Silicatchem, D-97070 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 14期

关键词：

D O I：

10.1063/1.124897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amplifying planar waveguide structures in Er-doped nanocrystalline II/VI semiconductor layer systems were developed by photolithography and wet chemical etching. 2 mu m thick planar waveguides on glass substrates with lateral dimensions down to 5 mu m with rectangular cross section were realized. By optical excitation a maximum gain of 82 cm(-1) could be determined, which is sufficiently high to allow the design of compact planar amplifiers in this material system. The influence of a thermal sintering step on the gain spectrum and on the fluorescence lifetime has been investigated. By increasing the sintering temperature to 800 degrees C a consistent increase of gain and fluorescence lifetime was observed. (C) 1999 American Institute of Physics. [S0003-6951(99)03240-4].

引用

页码：2005 / 2007

页数：3

共 14 条

[1] IR luminescence decays and radiative lifetime of the I-4(13/2) level in Er3+ doped sol-gel TiO2 planar waveguides [J].