Photoluminescence from SiO2 films containing Si nanocrystals and Er:: Effects of nanocrystalline size on the photoluminescence efficiency of Er3+

被引:240
作者
Fujii, M [1 ]
Yoshida, M
Hayashi, S
Yamamoto, K
机构
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Grad Sch Sci & Technol, Div Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
关键词
D O I
10.1063/1.368678
中图分类号
O59 [应用物理学];
学科分类号
摘要
SiO2 films containing Si nanocrystals (nc-Si) and Er were prepared and their photoluminescence (PL) properties were studied. The samples exhibited PL peaks at 0.8 and 1.54 mu m, which could be assigned to the electron-hole recombination in nc-Si and the intra-4f transition in Er3+, respectively. Correlation between the intensities of the two PL peaks was studied as functions of the size of nc-Si, Er concentration, excitation power and excitation wavelength. It was found that the 1.54 mu m PL of Er3+ is strongly enhanced by incorporating nc-Si in films. Furthermore, the intensity of the 1.54 mu m peak was found to depend strongly on the size of the incorporated nc-Si. (C) 1998 American Institute of Physics. [S0021-8979(98)06320-8]
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页码:4525 / 4531
页数:7
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