Photoluminescence from B-doped Si nanocrystals

被引：104

作者：

Fujii, M ^{[1
]}

Hayashi, S ^{[1
]}

Yamamoto, K ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 657, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 12期

关键词：

D O I：

10.1063/1.367976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron-doped Si nanocrystals as small as 3.5 nm were prepared and their photoluminescence (PL) properties were studied. The PL properties were found to be very sensitive to the B concentration. For the sample without B doping the temperature-dependent shift of the PL peak was almost the same as that of the bulk band gap. As the B concentration increased, the temperature dependence deviated from that of the bulk band gap, and the peak exhibited a low-energy shift as the temperature decreased. The anomalous temperature dependence is considered to be due to the contribution of the PL from excitons bound to the neutral B states. (C) 1998 American Institute of Physics.

引用

页码：7953 / 7957

页数：5

共 18 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[2] THEORETICAL DESCRIPTIONS OF POROUS SILICON
DELERUE, C
LANNOO, M
ALLAN, G
MARTIN, E
[J]. THIN SOLID FILMS, 1995, 255 (1-2) : 27 - 34
[3] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON
HAYNES, JR
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363
[4] Preparation and Raman study of B-doped Si microcrystals
Kanzawa, Y
Fujii, M
Hayashi, S
Yamamoto, K
[J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1996, 217 : 155 - 158
[5] Size-dependent near-infrared photoluminescence spectra of Si nanocrystals embedded in SiO2 matrices
Kanzawa, Y
Kageyama, T
Takeoka, S
Fujii, M
Hayashi, S
Yamamoto, K
[J]. SOLID STATE COMMUNICATIONS, 1997, 102 (07) : 533 - 537
[6] Doping of B atoms into Si nanocrystals prepared by rf cosputtering
Kanzawa, Y
Fujii, M
Hayashi, S
Yamamoto, K
[J]. SOLID STATE COMMUNICATIONS, 1996, 100 (04) : 227 - 230
[7] A LUMINESCENT SILICON NANOCRYSTAL COLLOID VIA A HIGH-TEMPERATURE AEROSOL REACTION
LITTAU, KA
SZAJOWSKI, PJ
MULLER, AJ
KORTAN, AR
BRUS, LE
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (06) : 1224 - 1230
[8] DEFECTS IN POROUS SILICON INVESTIGATED BY OPTICALLY DETECTED AND BY ELECTRON-PARAMAGNETIC-RESONANCE TECHNIQUES
MEYER, BK
HOFMANN, DM
STADLER, W
PETROVAKOCH, V
KOCH, F
OMLING, P
EMANUELSSON, P
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (15) : 2120 - 2122
[9] PHOTOLUMINESCENCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATIONS ON POROUS SILICON
MEYER, BK
HOFMANN, DM
STADLER, W
PETROVAKOCH, V
KOCH, F
EMANUELSSON, P
OMLING, P
[J]. JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 137 - 140
[10] ANOMALOUS TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN POROUS SILICON
NARASIMHAN, KL
BANERJEE, S
SRIVASTAVA, AK
SARDESAI, A
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (04) : 331 - 333

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