Photoluminescence from SiO2 films containing Si nanocrystals and Er:: Effects of nanocrystalline size on the photoluminescence efficiency of Er3+

被引：240

作者：

Fujii, M ^{[1
]}

Yoshida, M

Hayashi, S

Yamamoto, K

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

[2] Kobe Univ, Grad Sch Sci & Technol, Div Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 08期

关键词：

D O I：

10.1063/1.368678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiO2 films containing Si nanocrystals (nc-Si) and Er were prepared and their photoluminescence (PL) properties were studied. The samples exhibited PL peaks at 0.8 and 1.54 mu m, which could be assigned to the electron-hole recombination in nc-Si and the intra-4f transition in Er3+, respectively. Correlation between the intensities of the two PL peaks was studied as functions of the size of nc-Si, Er concentration, excitation power and excitation wavelength. It was found that the 1.54 mu m PL of Er3+ is strongly enhanced by incorporating nc-Si in films. Furthermore, the intensity of the 1.54 mu m peak was found to depend strongly on the size of the incorporated nc-Si. (C) 1998 American Institute of Physics. [S0021-8979(98)06320-8]

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页码：4525 / 4531

页数：7

相关论文

共 21 条

[11] Size-dependent near-infrared photoluminescence spectra of Si nanocrystals embedded in SiO2 matrices [J].

Kanzawa, Y ;

Kageyama, T ;

Takeoka, S ;

Fujii, M ;

Hayashi, S ;

Yamamoto, K .

SOLID STATE COMMUNICATIONS, 1997, 102 (07) :533-537

[12] Doping of B atoms into Si nanocrystals prepared by rf cosputtering [J].

Kanzawa, Y ;

Fujii, M ;

Hayashi, S ;

Yamamoto, K .

SOLID STATE COMMUNICATIONS, 1996, 100 (04) :227-230

[13]

PETROVAKOCH V, 1995, MATER RES SOC SYMP P, V358, P483

[14] Erbium implanted thin film photonic materials [J].

Polman, A .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :1-39

[15] Optically active erbium centers in silicon [J].

Przybylinska, H ;

Jantsch, W ;

SuprunBelevitch, Y ;

Stepikhova, M ;

Palmetshofer, L ;

Hendorfer, G ;

Kozanecki, A ;

Wilson, RJ ;

Sealy, BJ .

PHYSICAL REVIEW B, 1996, 54 (04) :2532-2547

[16] SIZE, SHAPE, AND COMPOSITION OF LUMINESCENT SPECIES IN OXIDIZED SI NANOCRYSTALS AND H-PASSIVATED POROUS SI [J].

SCHUPPLER, S ;

FRIEDMAN, SL ;

MARCUS, MA ;

ADLER, DL ;

XIE, YH ;

ROSS, FM ;

CHABAL, YJ ;

HARRIS, TD ;

BRUS, LE ;

BROWN, WL ;

CHABAN, EE ;

SZAJOWSKI, PF ;

CHRISTMAN, SB ;

CITRIN, PH .

PHYSICAL REVIEW B, 1995, 52 (07) :4910-4925

[17] ORIGIN OF THE 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED POROUS SILICON [J].

SHIN, JH ;

VANDENHOVEN, GN ;

POLMAN, A .

APPLIED PHYSICS LETTERS, 1995, 66 (18) :2379-2381

[18] Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy [J].

Stimmer, J ;

Reittinger, A ;

Nutzel, JF ;

Abstreiter, G ;

Holzbrecher, H ;

Buchal, C .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3290-3292

[19] QUANTUM SIZE EFFECTS ON PHOTOLUMINESCENCE IN ULTRAFINE SI PARTICLES [J].

TAKAGI, H ;

OGAWA, H ;

YAMAZAKI, Y ;

ISHIZAKI, A ;

NAKAGIRI, T .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2379-2380

[20] ERBIUM IN OXYGEN-DOPED SILICON - OPTICAL-EXCITATION [J].

VANDENHOVEN, GN ;

SHIN, JH ;

POLMAN, A ;

LOMBARDO, S ;

CAMPISANO, SU .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2642-2650