Dynamical current redistribution and non-Gaussian 1/f noise

被引：53

作者：

Seidler, GT ^{[1
]}

Solin, SA ^{[1
]}

Marley, AC ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 17期

关键词：

RANDOM RESISTOR NETWORKS; METAL-INSULATOR COMPOSITES; PERCOLATION-THRESHOLD; 1-F NOISE; ELECTRON-LOCALIZATION; AMORPHOUS-SILICON; MESOSCOPIC NOISE; TELEGRAPH NOISE; FLUCTUATIONS; EXPONENTS;

D O I：

10.1103/PhysRevLett.76.3049

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dynamical current redistribution (DCR) in noisy resistors is discussed. Contrary to a common assumption in many theories and in the interpretation of many experiments. DCR can cause large-amplitude non-Gaussian (NG) noise for statistically independent fluctuators. NG effects are predicted to be large near the percolation threshold and near the metal-insulator transition. We report the first observations of NG noise in semiconductor superlattices and attribute this to DCR. We also show that DCR is the most likely explanation of NG noise in several other systems.

引用

页码：3049 / 3052

页数：4

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[1] CRITICAL-BEHAVIOR OF THE ELECTRICAL-RESISTANCE AND ITS NOISE IN INVERTED RANDOM-VOID SYSTEMS [J].