Multiphoton photoluminescence from GaN with tunable picosecond pulses

被引:38
作者
Kim, D
Libon, IH
Voelkmann, C
Shen, YR
PetrovaKoch, V
机构
[1] Department of Physics, University of California, Materials Sciences Division, Lawrence Berkeley Laboratory
关键词
D O I
10.1103/PhysRevB.55.R4907
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
UV photoluminescence (PL) from GaN thin films was observed by multiphoton excitation. The two-photon PL excitation spectrum near the band gap agrees with the theoretical two-photon-absorption spectrum. The pump-intensity dependence and the PL excitation spectrum in the infrared indicate the existence of midgap defect states around 1 eV above the valence band. This is confirmed by the PL excitation spectrum obtained with a two-color, two-photon excitation process.
引用
收藏
页码:R4907 / R4909
页数:3
相关论文
共 18 条
[1]   NONDEGENERATE 2-PHOTON ABSORPTION-SPECTRA OF ZNSE, ZNS AND ZNO [J].
BOLGER, JA ;
KAR, AK ;
WHERRETT, BS ;
DESALVO, R ;
HUTCHINGS, DC ;
HAGAN, DJ .
OPTICS COMMUNICATIONS, 1993, 97 (3-4) :203-209
[2]   Properties of the yellow luminescence in undoped GaN epitaxial layers [J].
Hofmann, DM ;
Kovalev, D ;
Steude, G ;
Meyer, BK ;
Hoffmann, A ;
Eckey, L ;
Heitz, R ;
Detchprom, T ;
Amano, H ;
Akasaki, I .
PHYSICAL REVIEW B, 1995, 52 (23) :16702-16706
[3]   NONDEGENERATE 2-PHOTON ABSORPTION IN ZINC BLENDE SEMICONDUCTORS [J].
HUTCHINGS, DC ;
VANSTRYLAND, EW .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1992, 9 (11) :2065-2074
[4]   UV REFLECTIVITY OF GAN - THEORY AND EXPERIMENT [J].
LAMBRECHT, WRL ;
SEGALL, B ;
RIFE, J ;
HUNTER, WR ;
WICKENDEN, DK .
PHYSICAL REVIEW B, 1995, 51 (19) :13516-13532
[5]   2-PHOTON ABSORPTION WITH EXCITON EFFECT FOR DEGENERATE VALENCE BANDS [J].
LEE, CC ;
FAN, HY .
PHYSICAL REVIEW B, 1974, 9 (08) :3502-3516
[6]   OPTICAL-PROPERTIES AND TEMPERATURE-DEPENDENCE OF THE INTERBAND-TRANSITIONS OF CUBIC AND HEXAGONAL GAN [J].
LOGOTHETIDIS, S ;
PETALAS, J ;
CARDONA, M ;
MOUSTAKAS, TD .
PHYSICAL REVIEW B, 1994, 50 (24) :18017-18029
[7]   Nonlinear electroreflectance from gallium nitride using optical second-harmonic generation [J].
Miragliotta, J ;
Wickenden, DK .
PHYSICAL REVIEW B, 1996, 53 (03) :1388-1397
[8]   OPTICAL 3RD-HARMONIC STUDIES OF THE DISPERSION IN (CHI)OVER-BAR((3)) FOR GALLIUM NITRIDE THIN-FILMS ON SAPPHIRE [J].
MIRAGLIOTTA, J ;
WICKENDEN, DK .
PHYSICAL REVIEW B, 1994, 50 (20) :14960-14964
[9]   LINEAR-OPTICAL AND NONLINEAR-OPTICAL PROPERTIES OF GAN THIN-FILMS [J].
MIRAGLIOTTA, J ;
WICKENDEN, DK ;
KISTENMACHER, TJ ;
BRYDEN, WA .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1993, 10 (08) :1447-1456
[10]   LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].
MORKOC, H ;
STRITE, S ;
GAO, GB ;
LIN, ME ;
SVERDLOV, B ;
BURNS, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398