OPTICAL 3RD-HARMONIC STUDIES OF THE DISPERSION IN (CHI)OVER-BAR((3)) FOR GALLIUM NITRIDE THIN-FILMS ON SAPPHIRE

被引：27

作者：

MIRAGLIOTTA, J

WICKENDEN, DK

机构：

[1] Applied Physics Laboratory, Johns Hopkins University, Laurel, MD 20723-6099, Johns Hopkins Road

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.50.14960

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Third-harmonic (TH) transmission spectroscopy was used to study the dispersion in the xxxx(3) element of the third-order susceptibility in wurtzite-phase gallium nitride (GaN) films on sapphire. Analysis of the nonlinear response showed an enhancement in xxxx(3) when the photon energy of the TH field was tuned to the absorption edge, Eg=3.398 eV, with a peak value of 2.7×10-11 e.s.u. Comparison with previous band-structure calculations of xxxx(3) in wide-band-gap zinc-blende semiconductors shows that the dispersion in GaN is qualitatively similar to the third-order response in ZnSe near the absorption edge. © 1994 The American Physical Society.

引用

页码：14960 / 14964

页数：5

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