Electronic properties of K-doped single-wall carbon nanotube bundles

被引：50

作者：

Jo, C ^{[1
]}

Kim, C

Lee, YH

机构：

[1] Sungkyunkwan Univ, Inst Basic Sci, Dept Phys, Suwon 440746, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.65.035420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated electronic properties of K-doped single-wall carbon nanotube bundles by the first principles calculations. The lattice expands up to 8% at K0.1C with negative binding energies, where distortion of tube walls is negligible up to K0.25C with full relaxation, contrary to the previous reports. Partial charge transfer occurs from potassium atom to the tube. The Fermi level and the amount of charge transfer increase with increasing doping concentration and saturate at large concentration, strongly indicating that the charge transfer is mainly responsible for conductivity increase of the tubes.

引用

页码：1 / 5

页数：5

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