Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells

被引：26

作者：

Martelli, F

Polimeni, A

Patane, A

Capizzi, M

Borri, P

Gurioli, M

Colocci, M

Bosacchi, A

Franchi, S

机构：

[1] UNIV ROMA LA SAPIENZA,DIPARTIMENTO FIS,IST NAZL FIS MAT,I-00185 ROME,ITALY

[2] UNIV FLORENCE,DIPARTIMENTO FIS,IST NAZL FIS MAT,I-50125 FLORENCE,ITALY

[3] CNR,IST MAT SPECIALI ELETTR & MAGNET,I-43100 PARMA,ITALY

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.53.7421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence measurements in InGaAs/GaAs quantum wells, both doped and undoped, have provided evidence of a bound exciton of intrinsic origin with peculiar properties. The intensity of this bound exciton exhibits an unusual dependence on the exciting power density. Its relative strength with respect to the free exciton is strongly modified by small changes of the excitation wavelength. Its linewidth closely matches that measured for the heavy-hole free exciton, independent of well width and indium concentration. These features lead one to conclude that the intrinsic bound exciton is localized by a photoassisted interfacial roughness. Possible microscopic origins of such a localizing potential are also tentatively given.

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页码：7421 / 7425

页数：5

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