Lifetime shortening in doped ZnS nanophosphors

被引:35
作者
Bhatti, H. S. [1 ]
Sharma, Rajesh
Verma, N. K.
Kumar, N.
Vadera, S. R.
Manzoor, K.
机构
[1] Punjabi Univ, Dept Phys, Patiala 147002, Punjab, India
[2] Inst Engn & Emerging Technol, Baddi 173205, Solan, India
[3] Thapar Inst Engn & Technol, SPMS, Patiala 147004, Punjab, India
[4] Def Lab, Jodhpur 342011, Rajasthan, India
关键词
D O I
10.1088/0022-3727/39/9/008
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnS: Mn nanophosphor has been doped with quencher impurity Ni using the colloidal precipitation method with capping agent polyvinyl pyrrolidone. The formation of similar to 2.5 nm sized nanoparticles has been confirmed by x-ray diffraction and transmission electron microscope studies. Energy and time resolved photoluminescence spectra of the synthesized nanophosphors have been studied at room temperature. Photoluminescent spectra for ZnS: Mn, Ni show three peaks at 412 nm, 433 nm and 590 nm corresponding to Ni impurity, sulphide vacancies (Vs) and Mn impurity, respectively. The ZnS: Mn nanophosphor show typical nanosecond lifetimes for defect-related emission and millisecond lifetimes for Mn impurity-related emission. However, the ZnS: Mn, Ni samples showed lifetime shortening, with variation of dopant concentration for defect-related (420 nm) as well as impurity-related emission (590 nm), which is attributed to exchange interaction between Mn2+ and nearest neighbour Ni2+ impurities.
引用
收藏
页码:1754 / 1760
页数:7
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