Vertical-cavity amplifying modulator at 1.3 μm

被引：10

作者：

Björlin, ES ^{[1
]}

Dahl, A

Piprek, J

Abraham, P

Chiu, YJ

Bowers, JE

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[2] Agil Commun Inc, Goleta, CA 93117 USA

[3] Royal Inst Technol, S-10044 Stockholm, Sweden

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 12期

关键词：

laser amplifiers; modulation; optical modulation; optical pumping; optical switches; semiconductor optical amplifiers;

D O I：

10.1109/68.969878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The modulation/switching properties of a vertical-cavity semiconductor optical amplifier operating at 1.3 mum wave, length are investigated. The device was optically pumped and operated in reflection mode. A 150-mV (100 mA) modulation of the drive to the pump source produced a 7-dB modulation of the pump power, which produced a 35-dB modulation in the output signal. The maximum extinction ratio was 35 dB, and limited by device heating. Frequency response measurements revealed a modulation bandwidth of 1.8 GHz when the amplifier was saturated. This enabled 2.5-Gb/s modulation of a -10 dBm input signal with 5.5-dB fiber-to-fiber gain.

引用

页码：1271 / 1273

页数：3

共 9 条

[1] Experimental and analytical evaluation of packaged 4x4 InGaAsP/InP semiconductor optical amplifier gate switch matrices for optical networks [J].

Almstrom, E ;

Larsen, CP ;

Gillner, L ;

vanBerlo, WH ;

Gustavsson, M ;

Berglind, E .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (06) :996-1004

[2] Long wavelength vertical-cavity semiconductor optical amplifiers [J].

Björlin, ES ;

Riou, B ;

Abraham, P ;

Piprek, J ;

Chiu, YJ ;

Black, KA ;

Keating, A ;

Bowers, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (02) :274-281

[3] Vertical-cavity amplifying photonic switch at 1.5 mu m [J].

Bouche, N ;

Corbett, B ;

Kuszelewicz, R ;

Raj, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (08) :1035-1037

[4] Single-port laser-amplifier modulators for local access [J].

Feuer, MD ;

Wiesenfeld, JM ;

Perino, JS ;

Burrus, CA ;

Raybon, G ;

Shunk, SC ;

Dutta, NK .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (09) :1175-1177

[5] SWITCHING CHARACTERISTICS OF LASER DIODE SWITCH [J].

IKEDA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (02) :157-164

[6] LASER DIODE SWITCH [J].

IKEDA, M .

ELECTRONICS LETTERS, 1981, 17 (23) :899-900

[7] HIGH-FREQUENCY MODULATION OF STRAINED LAYER MULTIPLE QUANTUM-WELL OPTICAL AMPLIFIERS [J].

KOREN, U ;

MILLER, BI ;

YOUNG, MG ;

KOCH, TL ;

JOPSON, RM ;

GNAUCK, AH ;

EVANKOW, JD ;

CHIEN, M .

ELECTRONICS LETTERS, 1991, 27 (01) :62-64

[8]

MOHRDIEK S, 1998, P LEOS, V2, P299

[9] SURFACE-NORMAL ELECTROABSORPTION REFLECTION MODULATORS USING ASYMMETRIC FABRY-PEROT STRUCTURES [J].

YAN, RH ;

SIMES, RJ ;

COLDREN, LA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (07) :1922-1931

← 1 →