Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices

被引：74

作者：

Hu, Wei ^{[1
]}

Chen, Xinman ^{[2
]}

Wu, Guangheng ^{[1
]}

Lin, Yanting ^{[1
]}

Qin, Ni ^{[1
]}

Bao, Dinghua ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[2] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 06期

基金：

高等学校博士学科点专项科研基金;

关键词：

THIN-FILMS; CHALLENGES;

D O I：

10.1063/1.4744950

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

We report on the co-existence of bipolar and unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt structures of which the ZnFe2O4 layer was fabricated by a chemical solution deposition method. The memory devices show reproducible and stable bipolar resistive switching, tri-state unipolar resistive switching under only applied negative bias voltage, and unipolar resistive switching transited from bipolar resistive switching with different electroforming conditions. Excellent switching cycling in both unipolar resistive switching and bipolar resistive switching is demonstrated. Based on the conducting filament model, electrochemical metallization effect has been proposed to explain the bipolar resistive switching behavior, whereas the unipolar resistive switching behavior is attributed to electrochemical metallization effect and thermochemical effect. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4744950]

引用

页数：4

共 23 条

[1]

Transition metal oxide thin films for nonvolatile resistive random access memory applications [J].