Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies

被引:114
作者
Rochas, A [1 ]
Pauchard, AR [1 ]
Besse, PA [1 ]
Pantic, D [1 ]
Prijic, Z [1 ]
Popovic, RS [1 ]
机构
[1] Swiss Fed Inst Technol, EPFL, Inst Microsyst, CH-1015 Lausanne, Switzerland
关键词
avalanche breakdown; avalanche photodiodes; complementary metal-oxide-semiconductor (CMOS) integrated circuits; noise; photodetectors; silicon; ultraviolet detectors;
D O I
10.1109/16.987107
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a simple design technique that allows the fabrication ofUV/blue- selective avalanche photodiodes in a conventional CMOS process. The photodiodes are fabricated in a twin tub 0.8 mum CMOS technology. An efficient guard-ring structure is created using the lateral diffusion of two n-well regions separated by a gap of 0.6 mum. When operated at a multiplication gain of 20, our photodiodes achieve a very low dark current of only 400 pA/mm(2), an excess noise factor F = 7 at lambda = 400 nm and a good gain uniformity. At zero bias voltage, the responsivity peaks at lambda = 470 nm, with 180 mA/W. It corresponds to a 50% quantum efficiency. Successive process steps are simulated to provide a comprehensive understanding of this technique.
引用
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页码:387 / 394
页数:8
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