PLANAR EPITAXIAL AVALANCHE PHOTODIODES WITH ENHANCED BLUE SENSITIVITY FOR SCINTILLATION DETECTORS

被引:1
作者
BOSLAU, O
VONMUNCH, W
机构
[1] Institut für Halbleitertechnik, University of Stuttgart, Stuttgart
关键词
D O I
10.1016/0924-4247(89)80037-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An avalanche photodiode based on epitaxial silicon material is described. A quantum efficiency of about 60% at a wavelength λ = 400 nm was obtained. Alpha particles with an energy of 5.48 MeV were detected by a combination of a CaF2:Eu crystal and an avalanche photodiode. The simplicity of the fabrication process, which requires only three masking steps, allows the generation of a linear array of avalanche photodiodes. © 1990.
引用
收藏
页码:570 / 573
页数:4
相关论文
共 4 条
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