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DESIGN CONSIDERATIONS FOR HIGH-VOLTAGE OVERLAY ANNULAR DIODES
被引:23
作者
:
ZOROGLU, DS
论文数:
0
引用数:
0
h-index:
0
ZOROGLU, DS
CLARK, LE
论文数:
0
引用数:
0
h-index:
0
CLARK, LE
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1972年
/ ED19卷
/ 01期
关键词
:
D O I
:
10.1109/T-ED.1972.17363
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:4 / +
页数:1
相关论文
共 8 条
[1]
BROWN GA, 1964 EL SOC M SAN FR
[2]
ELECTRODE CONTROL OF SIO2-PASSIVATED PLANAR JUNCTIONS
CASTRUCCI, PP
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0
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CASTRUCCI, PP
LOGAN, JS
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0
引用数:
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h-index:
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LOGAN, JS
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 394
-
&
[3]
CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS
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0
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DAVIES, RL
GENTRY, FE
论文数:
0
引用数:
0
h-index:
0
GENTRY, FE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(07)
: 313
-
+
[4]
EFFECT OF VARIATIONS IN SURFACE POTENTIAL ON JUNCTION CHARACTERISTICS
FORSTER, JH
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FORSTER, JH
VELORIC, HS
论文数:
0
引用数:
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VELORIC, HS
[J].
JOURNAL OF APPLIED PHYSICS,
1959,
30
(06)
: 906
-
914
[5]
EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS
GROVE, AS
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GROVE, AS
LEISTIKO, O
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HOOPER, WW
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HOOPER, WW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
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ED14
(03)
: 157
-
+
[6]
SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
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HOFSTEIN, SR
HEIMAN, FP
论文数:
0
引用数:
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HEIMAN, FP
[J].
PROCEEDINGS OF THE IEEE,
1963,
51
(09)
: 1190
-
&
[7]
TEMOFONTE TA, 1971 REL PHYS S LAS
[8]
1964, AF306023016 CONTR
←
1
→
共 8 条
[1]
BROWN GA, 1964 EL SOC M SAN FR
[2]
ELECTRODE CONTROL OF SIO2-PASSIVATED PLANAR JUNCTIONS
CASTRUCCI, PP
论文数:
0
引用数:
0
h-index:
0
CASTRUCCI, PP
LOGAN, JS
论文数:
0
引用数:
0
h-index:
0
LOGAN, JS
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 394
-
&
[3]
CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS
DAVIES, RL
论文数:
0
引用数:
0
h-index:
0
DAVIES, RL
GENTRY, FE
论文数:
0
引用数:
0
h-index:
0
GENTRY, FE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(07)
: 313
-
+
[4]
EFFECT OF VARIATIONS IN SURFACE POTENTIAL ON JUNCTION CHARACTERISTICS
FORSTER, JH
论文数:
0
引用数:
0
h-index:
0
FORSTER, JH
VELORIC, HS
论文数:
0
引用数:
0
h-index:
0
VELORIC, HS
[J].
JOURNAL OF APPLIED PHYSICS,
1959,
30
(06)
: 906
-
914
[5]
EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
HOOPER, WW
论文数:
0
引用数:
0
h-index:
0
HOOPER, WW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(03)
: 157
-
+
[6]
SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
PROCEEDINGS OF THE IEEE,
1963,
51
(09)
: 1190
-
&
[7]
TEMOFONTE TA, 1971 REL PHYS S LAS
[8]
1964, AF306023016 CONTR
←
1
→