Nearest-neighbor distance distribution of diamond nuclei on substrate surfaces

被引：6

作者：

Ascarelli, P

Cappelli, E

Pinzari, F

机构：

[1] Consiglio Nazionale delle Ricerche, Ist. Metoclologie Avanzate I., 00016 Monterotondo Scalo, Rome

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 13期

关键词：

D O I：

10.1063/1.118673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The origin of a nucleation density depletion around each diamond nucleus on a Si substrate surface is here related to a deformation zone induced by the diamond-substrate lattice misfit. This phenomenon determines a limitation on the maximum nucleation density obtainable. (C) 1997 American Institute of Physics.

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页码：1697 / 1699

页数：3

相关论文

共 8 条

[1] ANALYSIS AND MODELING OF DIAMOND HETEROGENEOUS NUCLEATION KINETICS [J].

ASCARELLI, P ;

FONTANA, S .

DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :990-996

[2] DISSIMILAR GRIT-SIZE DEPENDENCE OF THE DIAMOND NUCLEATION DENSITY ON SUBSTRATE SURFACE PRETREATMENTS [J].

ASCARELLI, P ;

FONTANA, S .

APPLIED SURFACE SCIENCE, 1993, 64 (04) :307-311

[3] THE EQUILIBRIUM OF CRYSTAL SURFACES [J].

CABRERA, N .

SURFACE SCIENCE, 1964, 2 :320-345

[4]

DOREMUS RH, 1985, RATES PHASE TRANSFOR, P24

[5] HETEROEPITAXIAL DIAMOND FILMS ON SILICON(001) - INTERFACE STRUCTURE AND CRYSTALLOGRAPHIC RELATIONS BETWEEN FILM AND SUBSTRATE [J].

JIA, CL ;

URBAN, K ;

JIANG, X .

PHYSICAL REVIEW B, 1995, 52 (07) :5164-5171

[6] NUCLEATION AND INITIAL GROWTH-PHASE OF DIAMOND THIN-FILMS ON (100)-SILICON [J].

JIANG, X ;

SCHIFFMANN, K ;

KLAGES, CP .

PHYSICAL REVIEW B, 1994, 50 (12) :8402-8410

[7]

KITTEL C, 1971, INTRO SOLID STATE PH, P678

[8] CHARACTERIZATION OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON BY INVACUO SURFACE-ANALYSIS AND TRANSMISSION ELECTRON-MICROSCOPY [J].

STONER, BR ;

MA, GHM ;

WOLTER, SD ;

GLASS, JT .

PHYSICAL REVIEW B, 1992, 45 (19) :11067-11084