Impurity NMR study of the acceptor band in Si(B)

被引：16

作者：

Fuller, SE ^{[1
]}

Meintjes, EM ^{[1
]}

Warren, WW ^{[1
]}

机构：

[1] OREGON STATE UNIV,DEPT PHYS,CORVALLIS,OR 97331

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.76.2806

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report results of B-11 impurity species and Si-29 host species nuclear magnetic resonance measurements in heavily doped Si(B). The data cover a wide temperature range between 100 and 500 K and carrier concentrations from 3.4 X 10(18) to 5 X 10(19) cm-3. Strongly temperature-dependent resonance shifts are analyzed to obtain values H-hf(B) approximate to 450 Oe/mu(beta) and H-hf(Si) approximate to 7 Oe/mu(beta) for the 11B and 29 Si impurity state hyperfine couplings, respectively. Spin-lattice relaxation rates, line broadening, and loss of NMR intensity at lower temperatures are interpreted in terms of progressive localization and are related to the observed decrease of mobility at low temperatures.

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页码：2806 / 2809

页数：4

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